Estudio de los modelos de microondas y su implementación en dispositivos ambipolares de grafeno
Palabras clave:
Grafeno, GFET, desfasadores analógicos, alta frecuencia, control de fase, radiofrecuencia, tecnologías emergentesResumen
Este estudio analiza la aplicación de transistores de efecto de campo de grafeno (GFET) en el diseño de desfasadores analógicos orientados a sistemas de alta frecuencia. Se destaca que las propiedades de ambipolaridad y capacitancia cuántica del grafeno permiten ajustar con precisión el ángulo de fase de la señal a través de la modulación de las tensiones de compuerta y drenaje, manteniendo constante la amplitud. Como propuesta pedagógica, se introduce un modelo formativo basado en la configuración de fuente común con redes de adaptación de impedancia, que optimizan la transferencia de potencia y facilitan el aprendizaje en estudiantes de ingeniería electrónica y telecomunicaciones. A través de simulaciones, se evidencian las variaciones del desfase (Φ21) y la ganancia (|S21|) en función de las condiciones de polarización, demostrando la efectividad del método en el control de fase. Asimismo, se plantea la implementación de esta funcionalidad mediante controles analógicos o digitales simples, lo que simplifica el diseño de sistemas avanzados de radiofrecuencia. En conjunto, este enfoque constituye una herramienta académica valiosa y una alternativa innovadora para el desarrollo de circuitos RF, resaltando el papel estratégico del grafeno en tecnologías emergentes.
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Derechos de autor 2023 Luis Iván Porras Ramírez (Autor/a)
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